Navitas Semiconductor has announced an all-gallium-nitride (GaN) 10 kW DC-DC power platform designed for 800 VDC next-generation AI data centers. Navitas says the platform delivers up to 98.5% peak efficiency and 1 MHz switching frequency, targeting higher power density for large-scale deployments using high-voltage DC (HVDC) architectures.

According to Navitas, the 10 kW 800 V-to-50 V DC-DC platform uses 650 V and 100 V GaNFast field-effect transistors (FETs) in a three-level half-bridge architecture with synchronous rectification. The company reports 98.5% peak efficiency and 98.1% full-load efficiency in a full-brick package (61 × 116 × 11 mm), with a stated power density of 2.1 kW/in³.

Navitas says the production-oriented design supports both 800 V-to-50 V and plus-minus 400 V-to-50 V architectures at 10 kW. It integrates auxiliary power and control, which Navitas says is intended to simplify adoption and enable high-power-density module designs for next-generation HVDC AI data centers.

“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”

Navitas says the platform is being evaluated by key data center customers through collaborative development and will debut at the Navitas booth (2027) at APEC, March 22–26 in San Antonio, Texas.

Source: Navitas Semiconductor