Coherent has announced the development of a 300 mm silicon carbide (SiC) substrate platform, targeting data center thermal management as AI workloads drive higher power density and heat loads. The company claims this next-generation platform builds on its 200 mm SiC substrate expertise to enable greater energy efficiency and improved thermal performance for advanced data infrastructure.
The new 300 mm SiC solution is designed to handle increasing thermal demands in data centers by providing low-resistivity, low-defect-density, and high-homogeneity substrates. According to Coherent, these properties deliver low-dissipation, high-frequency operation, and stable thermal performance, directly supporting the requirements of AI and other high-density computing systems.
Gary Ruland, Senior Vice President and General Manager at Coherent, stated, “AI is transforming the thermal-management landscape in datacenters, and silicon carbide is emerging as one of the foundational materials enabling this scalability,” continuing, “Our 300mm platform, which we plan to ramp in high volumes, delivers new levels of thermal efficiency that translate directly into faster, more power-efficient AI datacenters.”
While advanced data center applications are the primary focus, Coherent also notes its 300 mm SiC substrates support waveguide technology for augmented and virtual reality devices and power electronics. In these sectors, the company says the larger substrates can reduce chip costs and improve device yields, with target applications spanning electric vehicles, renewable energy, and industrial automation.
Source: Coherent
