ROHM Semiconductor has announced mass production of its SCT40xxDLL series of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) in TO-Leadless (TOLL) packages. According to ROHM, these new devices deliver approximately 39 percent better thermal performance compared to TO-263-7L packages with similar voltage and on-resistance ratings.
The SCT40xxDLL MOSFETs target high-density, low-profile applications, including power supplies for AI servers and data centers, as well as energy storage systems and photovoltaic inverters. ROHM reports that the series is engineered for use in totem pole power factor correction (PFC) circuits for slim form factor “pizza box” power supplies, where a device thickness of 4 mm or less is required. The TOLL package versions reduce the component footprint by about 26 percent and feature a profile of 2.3 mm—roughly half that of conventional packages.
Technically, the SCT40xxDLL series supports a drain-source rated voltage up to 750 V, while ROHM notes most standard TOLL-package MOSFETs are typically rated up to 650 V. This enhancement enables lower gate resistance, increases the safety margin for surge voltages, and helps to cut switching losses. The product lineup includes six models with on-resistance values ranging from 13 milliohms to 65 milliohms.
According to ROHM, mass production of the SCT40xxDLL series began in September 2025. Products are available for purchase through online distributors, and simulation models for the new MOSFETs can be downloaded from ROHM’s website to support rapid circuit evaluation and design.
Source: ROHM Semiconductor
