Toshiba has released the TPM1R408RH, an 80 V N-channel power MOSFET built on its latest U-MOS11-H process, targeting switched-mode power supplies used in industrial equipment for AI data centers and communications base stations. Shipments start today.
For data center power designers, the key spec is conduction loss: TPM1R408RH is rated at 1.4 mΩ (max) drain-source on-resistance (RDS(ON)) at VGS = 10 V, ID = 50 A, and Ta = 25°C. Toshiba compares that to the earlier 80 V TPM1R908QM (U-MOS X-H process), calling the new part’s RDS(ON) about 26% lower.
The company also publishes a switching-related figure of merit, RDS(ON) × Qg, intended to capture the tradeoff between conduction loss and gate-drive-related switching behavior. For TPM1R408RH, Toshiba lists 1.4 mΩ × 80 nC = 112 mΩ·nC, and it compares that to 205.2 mΩ·nC for TPM1R908QM (1.9 mΩ × 108 nC), describing the new device as about 45% lower.
And while MOSFET selection often starts with efficiency math, the practical pain in real SMPS builds is EMI and thermal headroom. Toshiba says TPM1R408RH suppresses spike voltage between drain and source during switching, which can reduce EMI and potentially simplify filter and snubber design work.
Packaging is also part of the story here: TPM1R408RH uses Toshiba’s SOP Advance(E) package. Toshiba states the package delivers about 65% lower package resistance and about 15% lower thermal resistance than its SOP Advance(N) package, aimed at reducing heat generation and improving heat dissipation for higher-output, more compact power supply designs.
For design validation, Toshiba points to SPICE support including a “G0” SPICE model for shorter verification cycles and “G2” SPICE models intended to more accurately reproduce transient characteristics. It also provides an online circuit simulator that runs in a web browser: Toshiba Online Circuit Simulator.
Toshiba’s product page for the device is here: TPM1R408RH.
