Engineering resource hub · Powering the AI data center

Infineon at OCP Global Summit 2026

Partner content from Infineon

OCP Global Summit returns to San Jose October 12–15, and AI infrastructure is again high on the agenda. As AI rack power scales from tens to hundreds of kilowatts and beyond, the industry is rethinking how power is delivered and managed across the data center. Traditional server-centric designs are giving way to more disaggregated architectures, with power conversion, battery backup and protection increasingly moving into dedicated sidecars and power racks to free space for compute and improve efficiency. At the same time, higher-voltage DC distribution is gaining momentum as a way to support the next generation of high-density AI infrastructure. This hub brings together executive insights, technical articles, reference designs and OCP sessions exploring the evolution of AI power architectures and will be updated throughout the event.

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San Jose · Oct 12–15

Infineon at OCP

Where to find Infineon at the OCP Global Summit 2026, and the sessions its engineers are presenting.

Event
OCP Global Summit 2026
Dates
October 12–15, 2026
Expo: Tuesday–Thursday
Location
San Jose Convention Center, San Jose, California
Theme
Scaling Innovation for the AI Era
Booth
E26
Demos
Latest innovations and products for:
SSTSSCBPSUBBUIBCProtectionII stage

Speaking sessions

Day / timeRoomSessionSpeaker
Wed, Oct 149:30 AMSJCC – Lower Level – LL20BCDPoster session
Energy Buffer to meet the peak power demands in AI server PSUs without disturbing the grid
Sam Abdel-Rahman
Thu, Oct 159:45 AMSJCC – Concourse Level – 212Talk
Future-proof security in TPM with SPDM and PQC capabilities
Antonio Cabrera Gutierrez
Thu, Oct 1511:15 AMSJCC – Concourse Level – 211Talk
Bunch of Wires Flexi 1.0: a low cost, low power D2D interface
Morgan Whately
Live expert panel · Thursday, October 29, 2026

Engineering AI Rack Power: Infineon Answers the Questions Asked at OCP

Three Infineon technology leaders take the questions engineers raised at OCP 2026 and the ones you submit at registration: 800 V DC distribution, solid-state transformers and breakers, sidecar power racks, and what to design for in 2027. Live and moderated, 60 minutes.

Register to Reserve Your Seat and Unlock Infineon’s Exclusive Content Hub

Executive interviews, technical documents and reference designs from Infineon on powering the AI data center, plus a live expert panel after OCP Global Summit. Register once to unlock everything and reserve your seat for the panel.

Data center selection guide41 pages
The future of powering AI24 pages
SST whitepaper5 pages
Expert panel seatThu, Oct 29, 2026

We’ll email you a confirmation link. The three documents, the interview and your panel seat unlock as soon as you confirm.
Video interviews

Executive Interview Series

Ahead of OCP Global Summit, Infineon leaders share their perspectives on the challenges and innovations shaping the future of AI data center architecture.

Executive interview

Fanny Björk, who runs application marketing for grid to load at Infineon, explains why the 50 V rack bus is reaching its limit as rack power climbs toward megawatt scale. She covers the move to 800 V DC distribution, centralized AC/DC conversion in the gray space, and solid-state transformers that remove one isolated conversion stage for roughly 1% higher efficiency. She discusses solid-state circuit breakers that isolate DC faults in microseconds, and on-site generation and storage for gigawatt sites.

Free downloads

Technical resources

Guides and whitepapers from Infineon. Free with a short registration form.

Data center semiconductor selection guide

Power engineers designing AI server racks face a topology fork: today's 48 V single-phase infrastructure tops out around 250 kW per rack, while GPU clusters already push beyond that. Infineon engineers lay out every conversion stage from medium-voltage AC input to sub-1 V core rail, with validated reference design and solutions for each node.

  • Selection guide · PDF · 41 pages
  • ~35 min read
  • Infineon Technologies
Download

Redefining the power flow in and beyond AI data centers

As AI power demand scales from kilowatt-level processors to megawatt racks and gigawatt-scale campuses, traditional power architectures are reaching their limits. This whitepaper explores seven key predictions for the future of AI power delivery, from vertical power delivery and high-voltage server boards to disaggregated rack architectures, HVDC distribution and data center-wide DC microgrids.

  • Whitepaper · PDF · 24 pages
  • ~25 min read
  • Dr. Gerald Deboy and Dr. Fanny Björk
Download

Why line-frequency transformers fall short in AI data center power design

For electrical engineers specifying medium-voltage distribution in large-scale data centers, the conventional line-frequency transformer is increasingly the wrong tool—it cannot regulate power flow, interface with DC buses, or scale to the multi-megawatt modular blocks that AI workloads demand. Infineon engineers lay out the technical case for solid-state transformers as a direct architectural response to those gaps.

  • Whitepaper · PDF · 5 pages
  • ~5 min read
  • Infineon Technologies
Download
From Infineon

Product highlights

Devices and reference designs Infineon is bringing to OCP, with links to datasheets, application notes and design files.

EiceDRIVER™ 2EDL6014AC-G2D and 2EDL90xG3 gate drivers

The 2EDL90xG3 is a 120 V gate driver with a common PCB footprint for Si and GaN designs, for AI data center PSUs, 48 V systems, HV-IBCs, BBUs and solid-state transformers. The compact 2EDL6014AC-G2D, a 120 V dual-channel floating gate driver, is optimized for high-density silicon designs such as switched-capacitor and multilevel converters.

New 48 V-to-12 V ILVB IBC reference design

Built for high-TDP rails and demanding transients, this reference design delivers 1.8 kW continuous. Its regulated 4:1 transformer-less architecture offers 1.7x higher power density and about 40% lower $/kW than standard regulated solutions. The XDP™ digital controller scales from one phase at 300 W to 16 phases at 4.8 kW, in full-Si and full-GaN versions.

OptiMOS™ 7 40 V switching-optimized MOSFET

Versus the previous-generation OptiMOS 6 BSC007N04LS6SC, this 40 V MOSFET achieves up to 56% lower Qgd, a 36% better RDS(on) × Qg figure of merit (at 4.5 V) and 24% lower QOSS. That means lower switching losses, higher switching frequencies and more power density in high-power DC-DC converters, HV-IBCs and 48 V conversion.

Updates

Latest from Infineon

Product news and booth updates will appear here during OCP, Oct 12–15.