Advantest has announced the release of the MTe power test platform, designed to enhance test efficiency and scalability for power semiconductors. Advantest reports that this new system aims to address increasing requirements for higher performance and lower cost of test driven by the demand for electrification in automotive, industrial, renewable energy, and telecommunications sectors.

According to Advantest, the MTe platform incorporates a modular hardware design, allowing for significant scalability and adaptability to a range of test environments. Its distributed computing architecture supports multisite testing and high-parallel-test capability, which the company claims will improve throughput and test efficiency, especially in high-volume manufacturing. The platform offers advanced digital control and resource optimization, maintaining performance while reducing system footprint.

The MTe system is designed to support emerging wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). It handles power devices with integrated digital intellectual property cores, including intelligent power modules (IPM) and integrated power devices (IPD). Advantest notes that the platform provides high-bandwidth capture, best-in-class gate driver control, dynamic and short-circuit testing up to 10 kA, and flexible high-voltage digital testing.

Advantest states that leading integrated device manufacturers and outsourced semiconductor assembly and test providers are among its target users. Early evaluations in automotive and industrial power applications have reportedly shown substantial gains in productivity and throughput compared with existing testers.

Source: Advantest