Advantest Corporation has announced the MTe power test platform, designed to address the testing requirements for the growing power semiconductor market. The company says the MTe aims to improve test efficiency and scalability, supporting increased demand seen in automotive, industrial, renewable energy, telecommunication, and data center infrastructure applications.
According to Advantest, the MTe platform features a modular hardware architecture, high system scalability, advanced digital control, and distributed computing. The platform is engineered to deliver significant footprint reduction and optimized resource distribution without performance loss, targeting integrated device manufacturers (IDM) and outsourced semiconductor assembly and test (OSAT) providers.
MTe is designed to test wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), as well as power devices integrating digital intellectual property (IP) cores including intelligent power modules (IPM) and integrated power devices (IPD). The company notes the platform is capable of high-bandwidth data capture, precise gate driver control, dynamic and short-circuit testing up to 10 kA, and flexible high-voltage digital functions.
The distributed computing architecture enables parallel multisite test for higher throughput, aligning with Advantest’s line of scalable test systems. Advantest reports that early evaluations by customers in automotive and industrial power applications have demonstrated improved productivity and test throughput compared to legacy equipment. The MTe platform is now available globally.
Source: Advantest Corporation
