Alpha and Omega Semiconductor has added two new power MOSFETs aimed at AI server DC-DC conversion: the AONC40202 (25 V) and AONC68816 (80 V). Both parts use a DFN 3.3 x 3.3 mm, double-sided cooling, source-down package intended to support high power density and tighter thermal limits in intermediate bus converter (IBC) applications inside AI servers and data center power stages.

The devices use an exposed drain contact with an optimized top-clip design, creating a double-sided thermal interface intended to move heat to heatsinks more effectively than single-sided cooling packages. For this package technology, Alpha and Omega Semiconductor lists Rthc-top(max) at 0.9 °C/W.

On the layout side, the source-down approach provides a larger source contact to the PCB, and the company’s center-gate pin layout is meant to make PCB routing easier by shortening the gate-driver connection. In dense power shelves where copper is already fighting for space with thermal paths and current handling, package pinout and loop geometry can be just as limiting as silicon loss numbers.

Alpha and Omega Semiconductor lists the AONC40202 with a continuous current capability of up to 405 A and a maximum junction temperature of 175° C. The company also says the AONC40202 and AONC68816 use its AlphaSGT silicon technology.

“AOS designed these latest MOSFETs to specifically satisfy intensifying AI server power needs,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS. “In particular, the double-sided cooling DFN 3.3×3.3 source-down packaging delivers superior heat transfer and thermal performance compared to traditional DFN 3.3×3.3 packaging solutions.”

The AONC40202 and AONC68816 are available now in production quantities with a 14–16 week lead time. In 1,000-piece quantities, unit pricing is listed at $1.85 for the AONC40202 and $1.95 for the AONC68816.

Source: Alpha and Omega Semiconductor