AOS launches 600 V super-junction MOSFET platform for data center power conversion

Alpha and Omega Semiconductor (AOS) has unveiled its αMOS E2 600 V Super Junction MOSFET platform and introduced the first device in the family, the AOTL037V60DE2 600 V MOSFET. AOS positions the platform for mid- to high-power switched-mode power supplies (SMPS) and solar inverter systems where designers are balancing higher efficiency, higher power density, lower system cost, and robustness under abnormal operating conditions.

For data center power infrastructure, AOS lists server and workstation power, plus telecom rectifiers, among the target applications. The company also names solar inverters, motor drives, and industrial power systems as additional markets for the device.

AOS says high-voltage super-junction MOSFETs are increasingly used in critical power-conversion topologies, including the slow leg of totem-pole power factor correction (PFC), LLC resonant converters, phase-shifted full-bridge (PSFB), and cyclo-converters. AOS adds that it engineered the αMOS E2 platform with a “robust intrinsic body diode” intended to handle hard-commutation scenarios, including reverse recovery of the freewheeling body diode during abnormal events such as short-circuits or start-up transients.

The AOTL037V60DE2 is packaged in TOLL and has a maximum RDS(ON) of 37 milliohms. In evaluations conducted by AOS’ application engineering team, AOS reports the device’s body-diode ruggedness “demonstrated the ability to withstand di/dt = 1300 A/μs under specific forward current (IF) conditions at a junction temperature of 150 °C.” AOS also reports its testing showed “superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs,” and it links that ruggedness to system-level reliability under abnormal operating scenarios.

AOS lists additional technical highlights for the platform: optimized for soft-switching topologies with “exceptionally low switching losses”; a rugged body diode with reduced reverse-recovery charge (Qrr); strong UIS, inrush-current handling, and wide safe operating area (SOA); and design measures to prevent self-turn-on under dynamic conditions. AOS also states the device is suitable for Totem Pole PFC, LLC, PSFB, and critical conduction mode (CrCM) H-4 and cyclo-inverter applications.

AOS says the AOTL037V60DE2 (600 V, 37 mOhm, TOLL) is available in production quantities with a 16-week lead time, and pricing is $5.58 per unit in 1,000-piece quantities.

Source: Alpha and Omega Semiconductor

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