Infineon has introduced the H-DPAK, a new top-side-cooled package integrating a complete half-bridge built on its 750 V CoolSiC G2 SiC MOSFET technology. The primary application target on the data center side is HVDC AI server power supplies—specifically five-level Active Neutral Point Clamped (5L ANPC) topologies—alongside HVDC battery and capacitor backup units.
As AI server clusters have pushed rack power densities into the tens of kilowatts, HVDC power distribution at 380 V and higher has become the dominant architecture for efficiency-sensitive deployments. The power supply units feeding those buses run complex multilevel topologies like 5L ANPC precisely because they need high efficiency at high voltages without pushing switch voltage stress to the limit—750 V-rated SiC fits that window with margin.
The H-DPAK integrates the full half-bridge—high-side and low-side switches—in a single package, rather than placing discrete devices on the board. The split lead frame design with optimized drain pads reduces parasitic loop inductance for cleaner switching at the high dv/dt rates SiC enables, while improving heat spreading across the package. Top-side cooling orientation makes the device compatible with liquid cooling in dense power stages, where removing heat through the board is impractical at these power levels.
The 2.3 mm package height matches Infineon’s existing Q-DPAK and TOLT packages for drop-in board compatibility. The 750V CoolSiC G2 adds low gate charge, high dv/dt capability, and wide gate-bias tolerance—useful for designs where gate driver architecture flexibility matters.
Source: Infineon Technologies
