ROHM has developed the RS7P200BM, a 100 V power MOSFET in a 5060-size (5.0 mm x 6.0 mm) DFN5060-8S package. It targets hot-swap circuits in AI servers using 48 V power supplies and power-supply designs that need battery protection in industrial equipment, where wide safe operating area (SOA) is needed to handle inrush current and overload conditions.
ROHM says demand for stable operation and higher power efficiency is rising in servers used with generative AI and high-performance GPUs, and that data centers are moving toward 48 V power supplies for improved power-conversion efficiency. In response, it has expanded its lineup of 100 V power MOSFETs for 48 V hot-swap designs.
RS7P200BM is specified at 4.0 milliohm on-resistance (RDS(on)) under VGS = 10 V, ID = 50 A, and Ta = 25 C. Under operating conditions of VDS = 48 V, ROHM reports a wide SOA of 7.5 A at a 10 ms pulse width and 25 A at 1 ms, positioning the device for hot-swap use where transient stress can be dominant.
ROHM also notes the smaller DFN5060-8S footprint supports higher-density mounting versus the RY7P250BM in a DFN8080-8S package that ROHM released in May 2025. The company claims the combination of low RDS(on) and wide SOA helps suppress heat generation, improving server power-supply efficiency while reducing cooling load and electricity costs.
Application examples listed by ROHM include 48 V system AI servers and data center power hot-swap circuits; 48 V system industrial equipment power supplies (forklifts, power tools, robots, fan motors); battery-powered industrial equipment such as automated guided vehicles (AGVs); and uninterruptible power supplies (UPS) and emergency power systems (battery backup units).
Source: ROHM
