ROHM Semiconductor has announced the release of its new 100V power MOSFET, the RS7P200BM, which it claims achieves industry-leading Safe Operating Area (SOA) in a compact 5.0 mm x 6.0 mm DFN5060-8S package. The device is designed specifically for hot-swap circuits in AI servers utilizing 48V power architectures and for industrial applications requiring battery protection.
According to ROHM, the RS7P200BM addresses the growing need for efficient and reliable power switching as demand rises for AI servers equipped with high-performance GPUs and generative AI workloads. The industry trend toward 48V power supply systems in data centers and AI servers aims to increase conversion efficiency. These applications increasingly require high-voltage, high-efficiency MOSFETs that can handle inrush and overload current during hot-swap events, while also supporting high-density mounting for compact server boards.
The RS7P200BM offers a low on-resistance of 4.0 mΩ (measured at VGS = 10V, ID = 50A, Ta = 25°C) and a wide SOA, handling 7.5A at a 10 ms pulse width and 25A at a 1 ms pulse width under a drain-source voltage of 48V. ROHM notes that this combination of low on-resistance and wide SOA supports stable server operation by suppressing heat generation, increasing power supply efficiency, reducing cooling requirements, and lowering total electricity costs.
The RS7P200BM allows for higher-density component mounting compared to ROHM’s previous RY7P250BM MOSFET, which uses a larger 8.0 mm x 8.0 mm package. Mass production started in September 2025, and the product is now available through online distributors such as DigiKey and Mouser.
ROHM highlights primary applications in 48V system AI servers, data center hot-swap circuits, and other industrial equipment including forklifts, power tools, robots, automated guided vehicles, and uninterruptible power supply or battery backup units.
Source: ROHM Semiconductor
