onsemi has introduced its GaNEXUS gallium nitride (GaN) power portfolio, with initial GaNEXUS FETs now sampling across 40 V to 650 V. The lineup targets power delivery for AI data centers, 48 V systems, robotics and industrial automation, and energy infrastructure, where switching losses, thermal headroom, and physical volume are constant constraints.

The initial portfolio spans 40 V to 650 V GaN FETs and includes 650 V GaNEXUS Smart devices with integrated protection features aimed at simplifying system integration and improving reliability. onsemi also ties GaNEXUS into its Treo Platform, which it describes as combining sensing, control, protection, and power management for system-level designs.

For data center engineers, the GaN story is straightforward: faster switching and lower switching losses can translate into smaller magnetics and lower heat to move, which is a direct lever on rack power density and power-shelf mechanical design. But the engineering trade is rarely “free”—higher-frequency designs tighten layout, EMI, and protection requirements, so integrated protection features in 650 V parts can matter just as much as raw device performance.

Performance claims and target use cases

In low- and medium-voltage designs, onsemi points to AI server 48 V intermediate bus converter (IBC) stages, battery backup units (BBU), and motor drives as targets. For those applications, it cites potential system-level outcomes of ~30% to 60% smaller magnetics, ~1.5x to 2x higher power density, and ~0.5% to 2% efficiency improvement (topology-dependent), alongside reduced switching losses and improved thermal performance and control stability.

For higher-voltage designs, onsemi calls out AI power shelves, high-voltage DC-DC conversion, PFC, and LLC stages. Here, it cites up to ~60% reduction in magnetics size in high-frequency AC-DC and resonant stages, ~1.5x to 2x higher power density in PFC, LLC, and HV DC-DC architectures, and ~0.5% to 1% efficiency gains with “meaningful thermal and operating-cost impact at scale.”

Packaging

onsemi says GaNEXUS devices use thermally enhanced packages with industry-standard footprints, including TOLL bottom-cooling, TOLT top-cooling, and dual-cooling 3.3 mm x 3.3 mm and 5 mm x 6 mm packages.

“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, vice president of the GaN division at onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”

Source: onsemi