STMicroelectronics has added seven 700 V gallium nitride (GaN) power transistors to its STPOWER PowerGaN portfolio, targeting higher-efficiency, higher-power-density power conversion in systems ranging from AI servers to robotics and industrial equipment. The new 700 V PowerGaN devices are aimed at designs pushing beyond conventional silicon limits as power demand and switching-frequency expectations continue to climb.
The devices are engineered for a 700 V operating rating and are intended for high-voltage power supplies using higher-frequency topologies. STMicroelectronics highlights GaN attributes including low conduction losses, very low switching loss at high operating frequencies, and zero reverse-recovery charge—characteristics that can translate into smaller and lighter power stages, along with lower operating temperatures, in applications like robotics, industrial power supplies, and smart-grid converters used for energy generation, distribution, and storage.
For data center power architects, the practical pull is straightforward: higher switching frequency is one of the most direct paths to shrinking magnetics and passives, which can raise power density and free up mechanical and airflow headroom inside tight server power shelves. But the real engineering work is still in gate-drive implementation, layout, and EMI control—GaN can deliver big switching benefits, yet it’s often less forgiving than silicon when the power loop and driver loop aren’t treated like RF problems.
Across the seven new enhancement-mode high-electron-mobility transistors (HEMTs), STMicroelectronics lists continuous current ratings from 6 A to 29 A and typical RDS(on) from 53 mΩ to 270 mΩ, with ultra-low internal capacitances and low gate charge. The company also states that each device’s Qg × RDS(on) figure of merit is “significantly ahead” of traditional silicon devices. ST says the parts can be used as MOSFET replacements in existing power-conversion circuits or to enable new, higher-frequency topologies.
The transistors come in DPAK, TO-LL, and PowerFLAT surface-mount packages. ST notes that the TO-LL and PowerFLAT options provide a Kelvin source connection to separate the gate-control circuit from the main power path to improve noise immunity, protect the gate driver, and preserve timing margin. The specific devices introduced are SGT350R70GTK (6 A, 270 mΩ) in a 6.10 mm × 6.60 mm 3-pin DPAK, SGT070R70HTO (26 A, 53 mΩ) in leadless TO-LL, and six PowerFLAT 8×8 parts: SGT080R70ILB (29 A, 60 mΩ), SGT105R70ILB (21.7 A, 80 mΩ), SGT140R70ILB (17 A, 106 mΩ), SGT190R70ILB (11.5 A, 138 mΩ), and SGT240R70ILB (10 A, 165 mΩ). All RDS(on) values are typical.
“Broadening our PowerGaN portfolio with new 700V devices extends the benefits of gallium-nitride technology into medium-power and high-power applications,” said Mario Aleo, Executive Vice President, Power & Discrete Sub-Group, STMicroelectronics.
The 700 V PowerGaN transistors are in production now and available through the company’s eSTore and distributors, priced from $0.63 to $2.25 in quantities of 1,000 pieces.
New 700 V PowerGaN transistors
Source: STMicroelectronics
