Toshiba Electronic Devices and Storage Corporation has launched three 650 volt silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) using its latest third-generation SiC MOSFET chips in a surface-mount TOLL package. Named “TW027U65C,” “TW048U65C,” and “TW083U65C,” the devices are now available in volume shipments.
According to Toshiba, these new MOSFETs target use in industrial equipment, including switched-mode power supplies for servers, data centers, and communications equipment. Other listed applications are uninterruptible power supplies, photovoltaic inverters, and electric vehicle charging stations.
The third-generation SiC MOSFETs in the surface-mount TOLL package reduce device volume by more than 80 percent compared to through-hole packages such as TO-247 and TO-247-4L(X). Toshiba reports that the compact form factor improves power density in equipment, and the TOLL package offers lower parasitic impedance, which contributes to reduced switching losses.
The four-terminal TOLL package supports a Kelvin connection as the signal source terminal for gate drive, minimizing inductance effects from the source wire inside the package. Toshiba claims this achieves high-speed switching performance. Specifically for the TW048U65C device, Toshiba’s internal measurements as of August 2025 indicate turn-on and turn-off losses are approximately 55 percent and 25 percent lower, respectively, compared to its current TO-247-packaged products without a Kelvin connection.
Additional technical details include an optimized ratio of drift resistance to channel resistance, enabling favorable temperature dependence of drain-source on-resistance. The MOSFETs also feature low drain-source on-resistance multiplied by gate-drain charge, and a diode forward voltage (VDSF) of negative 1.35 volts (typical) at VGS of negative five volts.
