Navitas Semiconductor is beginning shipments of its U.S.-manufactured 5th Generation GaNFast technology through a partnership with GlobalFoundries, with first shipments scheduled to start in September. The move puts Navitas’ Gen 5 GaNFast devices into production at a US-based foundry and is aimed at power conversion needs tied to AI infrastructure, high-performance computing, industrial electrification, and other critical applications.
Navitas’ Gen 5 GaNFast FETs and power integrated circuits are being manufactured on GlobalFoundries’ 200 mm GaN-on-silicon platform at its Burlington, Vermont facility. Navitas and GlobalFoundries previously set a long-term partnership in November 2025 focused on U.S. GaN innovation and domestic manufacturing.
The initial Gen 5 GaNFast product family is expected to include 650 V GaN FETs with RDS(ON) values of 11 mΩ, 18 mΩ, 50 mΩ, 120 mΩ, and 150 mΩ. Navitas expects first wafers to ship in September, internal samples in October, and strategic customer samples before the end of the year.
For data center power engineers, the practical implication is supply-chain and manufacturing geography, not just device specs. GaN components show up in high-frequency, high-density power stages where efficiency and power density matter, and moving a device family into a U.S. high-volume fab can change qualification, lead-time planning, and second-source strategy for operators and OEMs building power shelves, PSUs, and rack-level power systems.
“Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations,” said Chris Allexandre, president and CEO of Navitas. GlobalFoundries senior vice president of its power business Kannan Soundarapandian said, “The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply.”
Source: Navitas Semiconductor
