onsemi launches GaNEXUS GaN power FET portfolio sampling 40V to 650V

onsemi has launched GaNEXUS, a gallium nitride (GaN) power portfolio aimed at higher-efficiency, higher power-density power conversion in applications that include AI data center power delivery, industrial automation, robotics, and energy infrastructure. The initial GaNEXUS lineup is sampling now and spans GaN FETs from 40 V to 650 V, including 650 V GaNEXUS Smart devices with integrated protection features.

The company describes GaNEXUS as part of a broader power portfolio that also includes silicon and EliteSiC technologies, targeting designers who are mixing device types across the power-delivery chain to balance efficiency, thermal behavior, system size, and total cost. For data center engineers, the practical question is how these parts translate into smaller magnetics and higher-frequency conversion without creating new qualification and reliability headaches at scale.

onsemi says the GaNEXUS portfolio is designed for faster switching speeds, lower switching losses, improved thermal performance, and higher power density versus conventional silicon-based solutions. It also ties GaNEXUS to onsemi’s Treo Platform, which the company describes as integrating sensing, control, protection, and power management for system-level power solutions.

Targets: 48 V bus conversion through high-voltage power stages

For low- and medium-voltage use cases—onsemi lists AI server 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives—the company provides the following guidance: about 30% to 60% smaller magnetics, about 1.5x to 2x higher power density, and about 0.5% to 2% efficiency improvement depending on topology.

For higher-voltage applications—onsemi lists AI power shelves, high-voltage DC-DC conversion, PFC, and LLC stages—the company cites up to about a 60% reduction in magnetics size in high-frequency AC-DC and resonant stages, about 1.5x to 2x higher power density in PFC, LLC, and high-voltage DC-DC architectures, and about 0.5% to 1% efficiency gains. Even sub-point efficiency changes can matter in a power shelf or rack-scale power train, but those gains tend to be topology- and operating-point-dependent, so teams will want to see them in their own thermal and transient envelopes.

Packaging and protection features

onsemi says GaNEXUS devices use “thermally enhanced packages” with industry-standard footprints, including TOLL bottom-cooling, TOLT top-cooling, and dual-cooling 3.3 mm x 3.3 mm and 5 mm x 6 mm packages. For the 650 V class, GaNEXUS Smart parts add integrated protection features, which onsemi says are intended to simplify power-stage design, reduce system risk, and speed qualification.

“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, vice president of the GaN division at onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”

onsemi has product information posted for GaNEXUS and the Treo Platform.