Toshiba has started shipping test samples of the TW007D120E, a 1200 V trench-gate SiC MOSFET targeted at power supply systems for next-generation AI data centers. The device is aimed at improving power-conversion efficiency and power density in systems increasingly moving toward higher-voltage DC architectures.
The TW007D120E is built on Toshiba’s trench-gate structure, and the company describes it as delivering “industry-leading” low on-resistance per unit area (RDS(on)A). Toshiba also ties the device to reduced conduction loss (via lower on-resistance) and lower switching loss. Against Toshiba’s third-generation 1200 V SiC MOSFET (TW015Z120C), the company reports an approximately 58% reduction in RDS(on)A and an approximately 52% improvement in the figure of merit RDS(on) × Qgd, which captures the conduction-loss vs. switching-loss trade-off.
For data center power engineers, those two metrics matter because they directly shape heat rejection and efficiency at the power stage. Lower switching and conduction losses can reduce thermal load in rectifiers and DC-DC stages, which can translate into less heatsink mass, higher packing density, or more headroom before derating. But Toshiba’s comparisons are against its own prior-generation part, so operators will still want to validate performance in their specific topologies, switching frequencies, and thermal stack-ups.
Packaging is part of the pitch here: the MOSFET comes in a QDPAK package that supports top-side cooling, a mechanical choice that can simplify heat extraction paths in high-density power modules. Toshiba lists data center AC-DC and DC-DC power supplies as target applications, along with photovoltaic inverters, UPS, EV charging stations, energy storage systems, and industrial motors. The device’s listed gate-drive range is VGS\_ON = 15 V to 18 V.
Toshiba plans to prepare for mass production during fiscal year 2026 and says it will expand its trench-gate SiC MOSFET lineup, including development for automotive applications. The TW007D120E is based on results from JPNP21029, a project subsidized by NEDO. More info is on Toshiba’s semiconductor and storage site and its SiC power devices page.
