Navitas Semiconductor has introduced a 2,300 V silicon carbide (SiC) power module family aimed at higher-efficiency, higher-power-density designs in energy and grid infrastructure, including solid-state transformers, grid-scale battery energy storage systems (BESS), solar inverters, and megawatt EV charging.
The new device family, G4H08MT23GB4, is a 2,300 V full-bridge module in the industry-standard SiCPAK form factor, with an 8 mΩ RDS(ON). Navitas ties the electrical performance to its fourth-generation GeneSiC Trench-Assisted Planar (TAP) architecture, and describes the module as extending its 2,300 V and 3,300 V ultra-high-voltage SiC portfolio.
For data center engineers, the interesting hook is upstream of the white space: Navitas connects these ultra-high-voltage SiC modules to solid-state transformers that can convert grid power into high-voltage DC rails used inside AI data center racks. If you’re evaluating medium-voltage building blocks for grid-tied architectures, devices in the 2 kV to 3 kV class are often where topology options and insulation requirements start to dominate mechanical design, creepage/clearance, and test strategy.
Packaging and reliability details
Navitas lists several construction features for the module family. The design uses an aluminum nitride (AlN) active-metal-braze (AMB) substrate for heat spreading and an isolation capability of over 5 kV. It also uses epoxy-resin potting, which the company says reduces internal stress distribution, limits moisture and contaminant ingress, and improves thermal conductivity by 10x versus silicone gel.
On the interconnect side, the module uses press-fit pins, with a high-current option that Navitas says provides twice the current-carrying capability per pin versus standard press-fit connections. An option for pre-applied thermal interface material (TIM) is also available to standardize heatsink assembly.
Navitas also says the family will be qualified to its AEC-Plus reliability benchmark, which it describes as exceeding AEC-Q101 and JEDEC requirements. The company calls out dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing, extended durations for static high-temperature, high-voltage tests (HTRB, HTGB, and HTGB-R), extended power-cycling and temperature-cycling, and HV-H3TRB (HV-THB) qualification.
“This new 2300 V module delivers a leading RDS(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data center infrastructure,” said Paul Wheeler, VP & GM of Navitas’ SiC Business Unit.
Samples are available immediately in four variants: G4H08MT23GB4 (standard pins, no pre-applied TIM), G4H08MT23GB4-T (standard pins, pre-applied TIM), G4H08MT23GB4HC (high-current pins, no pre-applied TIM), and G4H08MT23GB4HC-T (high-current pins, pre-applied TIM). Navitas also offers a double-pulse test system, EVB-UHVSIC-GB-E-DPT-1, on request.
Source: Navitas Semiconductor
