ROHM’s 750 V SiC MOSFET has been adopted in a battery backup unit (BBU) used in AI server power supplies, as AI infrastructure pushes rack power systems toward higher-voltage, HVDC (high-voltage DC) architectures.
The device is ROHM’s SCT4013DLL, a 750 V SiC MOSFET installed in the power-supply section of a +400 V / -400 V power architecture for AI servers. ROHM lists a maximum junction temperature (Tj) of 175 C for the part, a spec aimed at maintaining stable operation in BBU designs where heat can rise with higher voltage and increasing power density.
HVDC architectures are being used to reduce power transmission losses in high-power, high-voltage environments, and ROHM points to BBUs and capacitor units (CUs) as protective elements at the rack level for power outages and momentary interruptions. The practical operator takeaway is simple: as distribution voltage rises, backup power electronics get harder to design, because switching devices have to handle higher bus voltages while keeping losses and thermal headroom under control.
ROHM also ties the same 750 V class to next-generation 800 VDC power architectures. In those designs, the supply voltage delivered to the battery pack inside the BBU is approximately 560 V, and ROHM says its 750 V rated SiC MOSFETs can be used in those systems.
ROHM says next-generation AI server power supplies will need backup systems that can control high voltages and large currents instantly with minimal power loss, and expects SiC power devices to be a key component.
Source: ROHM
